Opticist.org

J. Bravo-Abad, A. W. Rodriguez, J. D. Joannopoulos, P. T. Rakich, S. G. Johnson et al.
In this letter, we show theoretically how the light-confining properties of triply-resonant photonic resonators can be tailored to enable dramatic enhancements of the conversion efficiency of terahertz (THz) generation via nonlinear frequency down-conversion processes. Using detailed numerical calcu ... [Appl. Phys. Lett. 96, 101110 (2010)] published Wed Mar 10, 2010.

Xiaoyu Miao, Brandon Passmore, Aaron Gin, William Langston, Shivashankar Vangala et al.
We demonstrate metamaterials at the mid-infrared (mid-IR) wavelengths (812 [mu]m) that can be widely tuned by doping in adjacent semiconductor epilayers. The metamaterials are based on metallic split ring resonators (SRRs) fabricated on doped indium antimonide (InSb). Finite integral time-domain si ... [Appl. Phys. Lett. 96, 101111 (2010)] published Wed Mar 10, 2010.

G. Tabares, A. Hierro, J. M. Ulloa, A. Guzman, E. Munoz et al.
Schottky photodiodes based on Au-ZnMgO/sapphire are demonstrated covering the spectral region from 3.35 to 3.48 eV, with UV/VIS rejection ratios up to ~10 and responsivities as high as 185 A/W. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an inter ... [Appl. Phys. Lett. 96, 101112 (2010)] published Wed Mar 10, 2010.

K. Kalantar-zadeh, K. Khoshmanesh, A. A. Kayani, S. Nahavandi, and A. Mitchell
We present a tuneable optical waveguide using dielectrophoretically controlled nanoparticles in microfluidics. Silicon dioxide nanoparticles of different sizes in de-ionized water are channelled through a microfluidic system. An array of microelectrodes generates the dielectrophoretic force to funne ... [Appl. Phys. Lett. 96, 101108 (2010)] published Wed Mar 10, 2010.

H. C. Jeon, S. H. Park, S. J. Lee, T. W. Kang, and T. F. George
Electronic, optical, and electrical properties of CdZnO/MgZnO quantum well (QW) structures, considering internal field and polarization effect, are investigated by using many-body theory. The CdZnO/MgZnO QW structure with higher Cd composition, which has deeper and stronger confinement, is found to ... [Appl. Phys. Lett. 96, 101113 (2010)] published Wed Mar 10, 2010.

Chi-Sen Lee, Wei Guo, Debashish Basu, and Pallab Bhattacharya
A high-speed multiwavelength quantum dot comb laser, grown by molecular beam epitaxy, is demonstrated. The device is characterized with a 75.9 nm (full width at half maximum) and a 91.4 nm (Delta) wide lasing spectrum. There are 105 and 185 simultaneously emitted longitudinal modes with a maximum ch ... [Appl. Phys. Lett. 96, 101107 (2010)] published Wed Mar 10, 2010.

Jiaming Hao, Wei Yan, and Min Qiu
A zero index metamaterial (ZIM) can be utilized to block wave (super-reflection) or conceal objects completely (cloaking). The super-reflection device can be realized by a Mu zero (Epsilon zero) metamaterial with a perfect electric (magnetic) conductor inclusion of arbitrary shape and size for a tra ... [Appl. Phys. Lett. 96, 101109 (2010)] published Wed Mar 10, 2010.

Tsung-Yu Kao, Qing Hu, and John L. Reno
We report the demonstration of phase-locked arrays of surface-emitting distributed-feedback (DFB) terahertz quantum-cascade lasers with single-mode operations. Carefully designed phase sector locks several surface-emitting DFB laser ridges in-phase, creating tighter beam-patterns along the phased-ar ... [Appl. Phys. Lett. 96, 101106 (2010)] published Wed Mar 10, 2010.

Pallab Bhattacharya, Ayan Das, Debashish Basu, Wei Guo, and Junseok Heo
The characteristics of an electrically injected spin polarized single photon source have been investigated. The GaAs-based microcavity diode consists of a single InAs/GaAs self-organized quantum dot as the single photon source and a MnAs/AlGaAs Schottky tunnel barrier for the ferromagnetic contact t ... [Appl. Phys. Lett. 96, 101105 (2010)] published Tue Mar 9, 2010.

J. K. Wahlstrand, H. Zhang, and S. T. Cundiff
We describe a technique for transverse electroreflectance that uses broadband optical pulses from a mode-locked laser and a rapidly oscillating bias with a frequency near half the laser repetition rate. Since the electrodes are electrically isolated from the sample, highly nonuniform trap-enhanced f ... [Appl. Phys. Lett. 96, 101104 (2010)] published Tue Mar 9, 2010.

Takasumi Tanabe, Hisashi Sumikura, Hideaki Taniyama, Akihiko Shinya, and Masaya Notomi
We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteri ... [Appl. Phys. Lett. 96, 101103 (2010)] published Mon Mar 8, 2010.

Hee Jin Kim, Suk Choi, Seong-Soo Kim, Jae-Hyun Ryou, P. Douglas Yoder et al.
Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has al ... [Appl. Phys. Lett. 96, 101102 (2010)] published Mon Mar 8, 2010.

Miriam S. Vitiello and Gaetano Scamarcio
We report on the time-resolved measurement of the in-plane (v) and cross-plane (v) components of the heat transfer velocity in GaAs/AlGaAs quantum-cascade heterostructures. We compared the heating and cooling stages both in the active region and in the substrate with models of heat transfer in nanos ... [Appl. Phys. Lett. 96, 101101 (2010)] published Mon Mar 8, 2010.

E. Fazio, M. Alonzo, F. Devaux, A. Toncelli, N. Argiolas et al.
We report the observation of spatial confinement of a pump beam into a photorefractive solitonic channel induced by luminescence [luminescence induced spatial soliton (LISS)]. Trapped beams have been obtained in erbium doped lithium niobate crystals at concentrations as high as 0.7 mol % of erbium. ... [Appl. Phys. Lett. 96, 091107 (2010)] published Fri Mar 5, 2010.

D. S. Ghosh, T. L. Chen, and V. Pruneri
We propose a transparent conductor (TC) structure based on the combination of ultrathin Cu and Ti films. The conductive Cu layer becomes continuous, i.e., it reaches the percolation threshold, for thicknesses in the range of 5.56.5 nm. However, without any adequate countermeasure, such an ultrathin ... [Appl. Phys. Lett. 96, 091106 (2010)] published Fri Mar 5, 2010.

T.-H. Cheng, C.-Y. Ko, C.-Y. Chen, K.-L. Peng, G.-L. Luo et al.
Both direct and indirect transitions of photoluminescence and electroluminescence are observed in a Ge np diode. The relative intensity of direct radiative recombination with respect to indirect radiative recombination increases with the increase in the optical pumping power, injection current densi ... [Appl. Phys. Lett. 96, 091105 (2010)] published Thu Mar 4, 2010.

Kyu Sang Kim, Jin Ha Kim, Su Jin Jung, Yong Jo Park, and S. N. Cho
P-type AlGaN/GaN/InGaN superlattices were incorporated in a InGaN based blue light emitting diode as electron blocking layer to minimize the temperature dependence on optical output power. For the characteristic temperatures in range of 10 to 100 degrees C and at operation current of 350 mA, the ex ... [Appl. Phys. Lett. 96, 091104 (2010)] published Wed Mar 3, 2010.

Virginie Moreau, Gilles Tessier, Fabrice Raineri, Maia Brunstein, Alejandro Yacomotti et al.
Transient thermoreflectance imaging is used to study the dynamics of the temperature inside active two-dimensional photonic crystals (PhCs). We developed a pump-probe setup suited for optically pumped devices that presents submicrosecond time resolution and submicrometer spatial resolution. Characte ... [Appl. Phys. Lett. 96, 091103 (2010)] published Wed Mar 3, 2010.

A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel et al.
We have carried out a ptychographic scanning coherent diffraction imaging experiment on a test object in order to characterize the hard x-ray nanobeam in a scanning x-ray microscope. In addition to a high resolution image of the test object, a detailed quantitative picture of the complex wave field ... [Appl. Phys. Lett. 96, 091102 (2010)] published Mon Mar 1, 2010.

Samir Rihani, Richard Faulks, Harvey E. Beere, Ian Farrer, Michael Evans et al.
We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10 x 10 [mu]m mesa defined photoconductive gaps were fabricated on the mu ... [Appl. Phys. Lett. 96, 091101 (2010)] published Mon Mar 1, 2010.